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line edx analysis  (Hitachi Ltd)


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    Hitachi Ltd line edx analysis
    Line Edx Analysis, supplied by Hitachi Ltd, used in various techniques. Bioz Stars score: 99/100, based on 2393 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/line edx analysis/product/Hitachi Ltd
    Average 99 stars, based on 2393 article reviews
    line edx analysis - by Bioz Stars, 2026-05
    99/100 stars

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    Image Search Results


    HRXRD spectra result on the four-period stacked SiGe/Si multilayer epitaxial grown on Si substrate.

    Journal: Nanomaterials

    Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

    doi: 10.3390/nano11071689

    Figure Lengend Snippet: HRXRD spectra result on the four-period stacked SiGe/Si multilayer epitaxial grown on Si substrate.

    Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

    Techniques:

    ( a )Cross-section HAADF-STEM images of four-period stacked SiGe/Si multilayer; ( b ) its magnified images at the SiGe/Si interfaces.

    Journal: Nanomaterials

    Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

    doi: 10.3390/nano11071689

    Figure Lengend Snippet: ( a )Cross-section HAADF-STEM images of four-period stacked SiGe/Si multilayer; ( b ) its magnified images at the SiGe/Si interfaces.

    Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

    Techniques:

    EDX line scan analysis of Ge and Si elements across the four-period stacked SiGe/Si multilayer.

    Journal: Nanomaterials

    Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

    doi: 10.3390/nano11071689

    Figure Lengend Snippet: EDX line scan analysis of Ge and Si elements across the four-period stacked SiGe/Si multilayer.

    Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

    Techniques: